Abstract
A 200-nm-thick diamond-like carbon film was prepared on Ti-deposited Si (ρ<0.01 Ω cm) using a filtered arc deposition technique. Field-emission properties of it are enhanced as compared to films deposited on Si, showing an increased current and emission site density (∼1.2×103/cm2). A patterned diamond-like carbon flat thin film on Ti-deposited Si fabricated by the oxygen reactive ion-beam etching technique shows further enhanced field-emission properties. An emission site density of 3×103/cm2 was obtained. Field emission could be observed at a field value as low as 2.1 V/μm. It is shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion-beam etching are possible causes for the enhanced effects. It can also be explained by the Geis’ metal–diamond–vacuum triple junction emission mechanism.
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