Abstract
Recent advances in probing the electronic structure of SiC with electron-excitedluminescence techniques reveal the presence of localized electronic states near its surfacesand interfaces. These localized states form not only as a result of interface chemicalbonding but also due to the formation of new lattice polytypes. Such electronicfeatures are sensitive to the conditions under which the SiC is processed, as well asthe application of electrical or mechanical stress. These localized changes on ananometre scale provide a new perspective to Schottky barrier formation, bandalignment, and polytypism in SiC as well as its performance in electronic devices.
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