Abstract
Reflection, luminescence excitation and thermoluminescence excitation spectra have been measured for Bi 4Ge 3O 12 and Bi 4Si 3O 12 crystals in the energy range from 3 to 35 eV using synchrotron radiation. The reflection data are evaluated using a modified Kramers-Kronig method for extracting the information on optical constants of these crystals. The nature of electronic excitations in the fundamental absorption edge region is discussed, the value of forbidden-gap energy E g is estimated as 5.0 eV for Bi 4Ge 3O 12 and 5.4 eV for Bi 4Si 3O 12. Intrinsic luminescence with 2.5 eV maximum for Bi 4Si 3O 12 and 2.45 eV maximum for Bi 4Ge 3O 12 is due to both the relaxation of optically created excitons and recombination processes. The multiplication effect of electron excitations in E ⩾ 2 E g for these crystals is due to the inelastic scattering of hot photoelectrons and hot photoholes.
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