Abstract
The electron energy relaxation time τ ϵ has been analytically evaluated as a function of lattice temperature taking into account the electron-lattice scattering mechanisms for Si and Ge. Calculations have been carried on in the deformation potential approach including nonparabolicity and overlap corrections with a Maxwell-Boltzmann distribution function, and have been limited to the warm electron range. Since theoretical results agree only qualitatively, even accounting for different approaches, with available data, τ ϵ has been related to β a physical quantity given by a wealth of experimental data. Theoretical results agree satisfactorily with β and seem to indicate that the present theory is essentially sound. A comparative study of lattice scattering for Si and Ge evidences the different effects of the various electron-phonon scattering mechanisms upon τ ϵ .
Published Version
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