Electron energy quantization effects in the very thin film GAA SOI transistor

Abstract

Analysis of the energy quantization effects on the semiconductor region of the Gate-All-Around SOI transistor, based on the self-consistent solution to the Schrödinger and Poisson equations is presented in dependence on the gate voltage and semiconductor film thickness. For thicker semiconductor films the energy quantization manifests mainly at high surface potentials due to the confinement of electron wave functions in the potential wells at the surfaces. When the semiconductor film is very thin the quantization due to the confinement of electrons in the semiconductor film dominates and the maximum of electron concentration is located in the middle of it, supporting the concept of volume inversion. Upon increasing the gate voltage the concentration peak splits into two ones.