Electron energy loss spectra of the silicon 2 p, 2 s, carbon 1 s and valence shells of tetramethylsilane

Abstract

Inner shell excitation spectra of tetramethylsilane, (CH 3) 4Si, have been measured in the silicon 2 s, 2 p ( L I,II,III-shell) and carbon is ( K-shell) regions using electron energy-loss spectroscopy at an impact energy of 2.5 keV and a scattering angle of ~1°. The high-resolution valence shell spectrum has also been observed at an impact energy of 3 keV and a zero degree scattering angle. The silicon 2 p spectra are compared and contrasted with published photoabsorption spectra of SiF 4, SiH 4, and other related Si-containing molecules with varying ligands.