Electron energy distributions from GaP with negative electron affinity. II. Near-uv photoemission and secondary emission

Abstract

<dm:abstracts xmlns:dm="http://www.elsevier.com/xml/dm/dtd"><ce:abstract xmlns:ce="http://www.elsevier.com/xml/common/dtd" view="all" class="author" id="aep-abstract-id4"><ce:section-title>Publisher Summary</ce:section-title><ce:abstract-sec view="all" id="aep-abstract-sec-id5"><ce:simple-para id="fsabs009" view="all">This chapter reviews the silicon (Si)-based infrared focal plane arrays (FPA) technology, including the PtSi Schottky-barrier (SB) FPA, SiGe/Si HIP FPA, and some uncooled FPAs. Uncooled topics discussed in this chapter cover FPAs using pn-junction diodes on a Silicon On Insulator (SOI), Si-based resistance bolometers, and thermopiles. The chapter also discusses about cooled FPAs. Electrical characteristics of semiconductor devices have temperature dependence, and such devices can be used for temperature sensing. The pn-junction diode is a typical example of a semiconductor temperature sensor. Si-based infrared FPA technology has many attractive features such as low cost, high productivity, and large-scale integration. Si-based photoemissive detectors cover a wide spectral range from Short Wavelength Infrared (SWIR) to Long Wavelength Infrared (LWIR). PtSi SB FPAs have led to the commercialization of cooled infrared cameras, which are being used in many commercial applications. High quality LWIR images have already been demonstrated with a full TV resolution GeSi HIP FPA. Uncooled FPAs are expected to be used for low-end applications to which cooled infrared systems cannot be applied. Such applications require low-cost high-volume production of infrared FPAs, and Si-based technology is the best choice for manufacturing such uncooled FPAs. Si-based uncooled infrared technologies have reached a level suitable for many commercial applications, and will open up a huge new infrared market.</ce:simple-para></ce:abstract-sec></ce:abstract></dm:abstracts>