Abstract
The work contains results of investigation on the phenomena of the field induced electron emission and photoemission in thin doped oxide layers (10 to 200 nm) In 2O 3 and SnO 2 (ITO––indium tin oxide). These layers have been deposited onto both surfaces of a glass using a constant-current ion sputtering method. A negative voltage U pol to the field electrode created the internal electric field. The studies were performed in the vacuum of the order 10 −6 Pa. As a result of applying U pol and illumination the photoelectrons are recorded as voltage pulses in the multichannel pulse amplitude analyzer. Electron emission yield dependence on the intensity of an internal field and illumination was measured. With increasing U pol the count frequency n of pulses grows monotonically. The exponential dependence n= f( U pol) has been found. A phenomenological model of the ITO layer partition on the two zones depleted and enhanced of carriers is given in order to explain the observed effects.
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