Abstract
Abstract Co-evaporated thin films of SiO and BaO were prepared and used as the insulator material in MIM and MIMIM structures, where the metal M was Al, Ag or Cu. Electroforming processes, resulting in an increase in the circulating current after the application of a direct forming voltage, were slow when Al electrodes were used but quite rapid with Ag or Cu electrodes. For devices formed with Cu or Ag electrodes the peak circulating current observed was at a voltage of the order of 2.6-3.2 V. At this applied voltage the electron emission current rose sharply and reached values comparable with those measured from MIM structures using SiO as the insulator. The probable existence of high field regions in the insulator was further tested by investigating triode structures and the forming processes were found to be quite complex. Although the polyfilamentary model can explain most of the diode properties, a refinement to this theory is needed to explain the forming effects observed with triode structures and this will involve a more careful consideration of the role of oxygen, as well as the usually considered metal and vacancy diffusion.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
