Abstract
The formation of selenide layers at the interface between Se and Cu, Ag and Al electrodes has been studied by vacuum photoemission. Cu and Ag react rapidly to form thick selenide layers while Al rectts to produce a layer protective against further reaction. The valence band maximum in the thick Se layer lies 1.26 eV below E F with the copper electrode, 1.2 eV below E F with an Ag electrode and 1.0 eV with an aluminum electrode.
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