Abstract
We have investigated electron capture times in n-type GaAs/AlAs/Al 0.3Ga 0.7As double-barrier quantum well (DBQW) structures in an electric field along the growth direction. To this end, the time dependence of the photoluminescence (PL) originating from the GaAs wells and the Al 0.3Ga 0.7As barrier layers is analyzed numerically. Theoretical electron capture times are calculated for the investigated DBQW's for the case of several scattering mechanisms. Electron capture mainly occurs via Γ- X intervalley transfer under participation of X-point subbands located at the AlAs tunnel barriers. Good agreement between experiment and theory is obtained when assuming Γ- X backfolding, while impurity scattering, optical phonon-assisted Γ-tunneling, and deformation potential scattering give rise to much larger electron capture times.
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