Abstract
The effect of ≈2 MeV electron bombardment on the reverse characteristics and tensoelectric properties in p +- nGaAs diodes is investigated. The reverse breakdown voltage showed a weak increase due to irradiation and an anomalous temperature dependence in the range 77–300 K. The I–V characteristics in electron-irradiated diodes revealed a high pressure sensitivity (tensosensibility) to the external hydrostatic pressure (up to 6 · 10 8 Pa). The peculiarities in the reverse I–V characteristics of diodes investigated point to the presence of a radiation-induced deep trap (acceptor-type level at about E 0 − 0.3 + 0.4 eV), which is attached to the Γ 15 V-maximum of the valence band.
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