Abstract
Maskless or ideally ‘‘resistless’ patterning of semiconductors is essential for in situ processes which require regrowth of semiconductor layers. If a practical method of patterning SiO2 were viable, many processing problems related to tasks currently utilizing organic resists could be eliminated. With the knowledge that etching selectivity can be induced in SiO2 by electron beam exposure, experiments were performed with the goal of gaining an understanding of some of the practical aspects of electron beam exposure and etching of SiO2. Electron beam energy optimization considerations for dose minimization were addressed followed by e‐beam exposure and etching of 100 nm films of thermal and remote plasma enhanced chemical vapor deposition SiO2. The etching characteristics of the respective oxides are presented and discussed.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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