Abstract
The local strain-induced indirect-to-direct band gap transition in bulk transition metal dichalcogenides (TMDCs) holds great potential for optoelectronic applications. The formation of domes on the topmost layer of a multilayered flake through hydrogen ion H+ irradiation is an effective technique for tuning the band gap locally via molecular hydrogen (H2) confinement. In this work, we present an alternative robust, simpler, and faster technique for concurrently forming and visualizing dome-like structures of two-dimensional (2D) materials through low-energy electron beam irradiation. We investigated the growth mechanism and dynamics of the domes under exposure to electron beams at different energy levels. The simultaneous production and imaging of atomically thin domes of 2D materials has several practical and fundamental applications, such as mass storage and transport, single photon emission, nano/micro-electromechanical sensors, strain engineering, etc.
Published Version
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