Abstract
From studies on the epitaxial growth of CeO 2 layers on Si(1 0 0) substrates using reactive DC magnetron sputtering, it has been found that the epitaxial CeO 2 layer with (1 0 0) or (1 1 0) orientation is selectively grown by controlling substrate bias and the growth rate. Optimum bias for the CeO 2 (1 0 0) layer growth was ± 15 V . In order to develop this technology into two-dimensional orientation selectivity, we attempt to grow CeO 2 (1 0 0) by low energy electron irradiation, as an alternative way to substrate bias application. It proved that electron beams in two energy regions of 30–40 and 80–100 eV are effective on preferential growth of CeO 2 (1 0 0) layers.
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