Abstract
Variable temperature electron beam induced current technique was employed for the profiling of ZnO p-n homojunctions and the extraction of minority electron diffusion length values in the Sb-doped p-type ZnO region. A thermally induced increase for diffusion length of minority electrons was determined to have an activation energy of ∼145meV. The latter parameter likely represents carrier delocalization energy and determines the increase of the diffusion length due to the reduction in recombination efficiency.
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