Abstract
EBICO (electron-beam-induced conductivity) — which is similar in principle to photoconductivity — is found to be a valuable tool in investigating minority carrier diffusion at high electric fields. Due to the very local excitation of e-h pairs by the electron beam (approx. 1 μm width) it is possible to scan the EBICO-signal from the vicinity of the contacts into the bulk of the sample. In this case recombination (at the contacts and in the bulk) as well as drift governs the structure of EBICO. By comparison of the observed scans with model calculations, it is possible to determine the diffusion length and lifetime of minority carriers (holes) as a function of the applied electric field. In the range of 50–1300 V/cm we find a decrease of the lifetime from about 0.6 to 0.2 ns for our samples of GaAs.
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