Abstract
Electron-beam deposited films of phosphosilicate (PSG) have been investigated as dielectrics for the encapsulation of Si-implanted GaAs for the purpose of post-implant annealing. The processing parameters that were optimized included the thickness of PSG film, the substrate temperature, and the annealing time and temperature. PSG films deposited at temperatures ≥300 °C showed no signs of deterioration up to temperatures in excess of 900 °C for 30-min anneals carried out in a forming gas and/or nitrogen ambient. Depth profiles in excellent agreement with the Lindhard–Scharff–Schiott curves were obtained with 1000-Å-thick films when annealed at 850 °C for 30 min. The diffusion coefficient of implanted silicon was found to be an order of magnitude smaller for the PSG films than that for the conventional plasma assisted chemical vapor deposited SiO2 films at 850 °C.
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