Abstract
Solid phase epitaxial layers of Al0.25Ga0.75P, Al0.5Ga0.5P, and Al0.75Ga0.25P were grown on (111), (100), and (110) GaP substrates, respectively, by using an electron beam epitaxy technique at 50 °C. The surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (0.1–1.0)×1018 electrons cm−2 at 7 MeV. After the irradiation and removal of the Al layers, evidence of the creation of epilayers that had been formed before annealing was obtained from a secondary-ion mass spectrometer, an x-ray diffractometer, and a reflection high-energy electron diffractometer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
