Abstract
An electron-beam electroreflectance (EBER) spectroscopy system combined with a scanning electron microscope has been newly developed. We can obtain the electron-beam electroreflectance spectrum from a local area monitored by the scanning electron microscope. Utilizing this contactless system, electron-beam electroreflectance spectra of GaAs and Si wafers, CuAlSe2 and CuGaSe2 chalcopyrite crystals grown on GaAs(001), and ZnSe thin films on GaAs(001) were measured in the range of 1.0–6.0 eV. The modulation mechanism of EBER was clarified by a systematic investigation of the modulated signal as a function of beam-current density, electron energy, and modulation frequency. We suggest that the electron-beam electroreflectance system is suitable for studying and characterizing electronic structures of semiconductors: bulk, surface/interface, heterostructures, and microstructures.
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