Electron Beam Doping in Damageless Regions of Semiconductors by the Kick-Out Mechanism (Interstitialcy and Direct Interstitial Mechanism)

Abstract

It is demonstrated that the interchange of impurity foreign atoms between substitutional and interstitial sites occurring during the diffusion of impurities in damage-free Si and GaAs due to the electron beam doping by superdiffusion is controlled by the kick-out mechanism. Their diffusion profiles in semiconductors are in good agreement with the exact solution of Seeger's theory of the kick-out diffusion.