Electron beam doping (superdiffusion) in damage-free regions of semiconductors by the kick-out mechanism (SIMS and PL measurements)

Abstract

It is shown that electron-beam doping processes (superdiffusion) in semiconductors are useful for microprocesses, even in the damage-free region and at room temperature, and these experimental results are in good agreement with the exact solutions of the so-called kick-out mechanism. Silicon and zinc atoms diffuse into GaAs wafers, respectively due to the kick-out mechanism by electron beam doping.