Abstract
The electron beam domain patterning of MgO-doped congruent lithium niobate (LN) single crystals covered by electron beam resist layer were studied for various layer thicknesses and electron accelerating voltages. The obtained domain patterns were divided in four types. The increasing of the domain structure quality under presence of the resist layer on irradiated surface was confirmed. This effect was attributed to high concentration of the electron traps in resist, which localized incident electrons in limited volume over LN surface and formed effective electrode. The voltage dependence of space charge localization relative to the LN surface was studied by computer simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
