Abstract
Characteristics of thermally stimulated luminescence (TSL) are studied for the X-ray irradiated at 4, 80, or 295 K nominally undoped Y2SiO5 and Lu2SiO5 single crystals of different origin, containing traps for holes (Ce3+, Tb3+ ions) and electrons (Eu3+, Mo6+ ions), as well as for the Sm3+-doped Lu2SiO5 crystal. For the first time, the TSL glow curves of these materials are measured separately for the electron (Ce3+-, Tb3+-related) and hole (Sm3+-, Eu3+-related) recombination luminescence. Owing to that, the TSL peaks, arising from thermal destruction of electron centers and hole centers, are separately identified. For some TSL peaks, thermal stability parameters of the corresponding traps are calculated. The results are compared with those obtained for Ce3+-doped Y2SiO5 and Lu2SiO5 crystals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
