Electron and hole in-plane g-factors in single InAs quantum rings

R Kaji,T Tominaga,Y-N Wu,S Adachi,S-J Cheng

doi:10.1088/1742-6596/647/1/012011

Abstract

The electron and hole in-plane g-factors were studied in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically along the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.

Highlights

Spin confined in the semiconductor nanostructures is one of the prospective candidates for the basis in coming quantum information technology
The confinement of carrier wave functions yields a long spin coherence time via the strong suppression of spin relaxation processes originated from the spinorbit interaction, and quite longer spin coherence times compared to that reported in the bulk or quantum wells have been achieved in the quantum dots (QDs)
Several works have focused on developing techniques for the control and the evaluation of electron and/or hole g-factors. These techniques include the appropriate adoption of materials and structures in III-V bulk semiconductors, [4] the application of bias voltages to In(Ga)As QDs, [5, 6] and the utilization of nuclear spin polarization in InAlAs QDs

Summary

Introduction

Spin confined in the semiconductor nanostructures is one of the prospective candidates for the basis in coming quantum information technology. We focus on the electron and hole g-factors (ge, gh) in the individual InAs/GaAs quantum rings (QRs).

Results

Conclusion