Abstract
The electron and hole g-factors in individual InAs/GaAs quantum rings were evaluated using the bistable responses of the optically induced nuclear spin polarization. Although the dispersions of the hole and exciton g-factors were larger than that of the electron g-factor in the individual quantum rings, a strong correlation between the hole and exciton g-factors was clearly observed. Part of the dispersion of the measured hole g-factor was explained well by considering the effect of strain-induced valence band mixing.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call