Electron and Hole Capture at Au and Pt Centers in Silicon

Abstract

Emission rates and hole-capture cross sections for the Au donor center in silicon are reported and from entropy considerations this center is shown to be similar in behavior to the Pt donor center. In contrast, the gold and platinum acceptor states display significantly different entropy changes on electron emission. A similar chemical structure for both these defects is proposed which is then used to interpret differences in electron emission behavior from the acceptor forms of the two defects.