Abstract
Effects of high-energy electrons or gamma irradiation on the interface states of ion implanted MOS structures have been investigated by thermally stimulated charge method. The n-type Si–SiO 2 samples with oxide thickness of 20, 200 and 300 are implanted with 50 keV boron ions to a dose of 1.5 × 10 12 cm −2. Formed MOS structures are irradiated with 11 MeV electrons or 60Co γ-rays. The energy position and the concentration of the radiation-induced interface traps are determined. It is shown that the kinds of radiation-induced interface traps and their concentration depend on the disposition of the maximum of the previously implanted boron ions with respect to the Si–SiO 2 interface.
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