Abstract
The effects of 11 MeV electron irradiation of boron ion implanted Si–SiO 2 structures with different oxide thickness have been investigated by thermally stimulated charge (TSC) method. It has been shown that electron irradiation of implanted with 20 keV boron ions structures results in the formation of a trap spectrum which locates in the same temperature range as the spectrum of the as-implanted samples. The density of radiation-induced interface traps after electron irradiation has been found to depend on the disposition of the maximum of the previously implanted boron ions with respect to the Si–SiO 2 interface.
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