Abstract
Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the tilting of semiconductor bands by the perturbing potential of an electric field. In this case, electron eigenfunctions are not plane waves or Bloch functions. In low-field regime, the expressions for electron intraband transition probability and scattering time are obtained under elastic collision approximation. Dependencies of scattering time on electron energy and uniform electric field are analyzed. The results of corresponding numerical computations for n-Si at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time dependence on the electron energy.
Highlights
Current carrier mobility μ is an important parameter characterizing many transport phenomena in semiconductors under electric field F
Relaxation time τk is determined by the electron scattering by various dynamic and static imperfections of a crystall lattice such as lattice vibrations, ionized and neutral impurity atoms, vacancies, etc
The relaxation time related to electron-acoustic single phonon elastic scattering in non-degenerate n-type semiconductor with a spherical parabolic conduction band is given by
Summary
Current carrier (electron) mobility μ is an important parameter characterizing many transport phenomena in semiconductors under electric field F. For theoretical consideration of scattering probability and relaxation time τk, a flat-band semiconductor model is used, as a rule [1,2,3,4] In this case, in low electric field region (F < Fc, where Fc is a characteristic field), the electron relaxation time τk and, the mobility μ are field-independent quantities [1, 4, 5]. The relaxation time related to electron-acoustic single phonon elastic scattering in non-degenerate n-type semiconductor with a spherical parabolic conduction band is given by [1,2,3,4]. It is assumed that the non-degenerate n-type semiconductor has a parabolic conduction band
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