Abstract
Abstract The electromigration on void formation and failure mechanism of FCBGA packages under a current density of 1 × 104 A/cm2 and an environmental temperature of 150 °C was investigated. Two solder/substrate combinations of Sn3Ag1.5Cu with Cu-OSP and Cu/Ni/Au were examined. A conservative failure criterion was adopted to predict the failure of package, and SEM was used to observe in situ microstructural change and failure modes. Failure was mainly attributed to void occupation along UBM/solder interfaces by the side of cathode chip of bumps with downward electron flow. The current crowding was the cause for void initiation from the entrance corner of electron flow. Two specific void locations were identified at IMC/solder and UBM/IMC interfaces, and both can co-exist in the same specimen but in different bumps. No coupling mode of void was found. Since there is a discrepancy of diffusion rate between solder and IMC layers, current density results in more voids between them. A current density of 1 × 104 A/cm2 was found as a dominant factor that was high enough for void pattern at IMC/solder interface. However, the void formation at the UBM/IMC interface was generally induced by the UBM consumption due to the high temperature of 150 °C that dominates the void morphology crucially at UBM/IMC interface.
Published Version
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