Electromigration lifetimes and void growth at low cumulative failure probability

Abstract

We have investigated electromigration (EM) lifetimes and void formation at cumulative failure probability of around 50 ppm. We carried out EM test in damascene Cu lines using sudden-death test structures. Cumulative failure probability of the test ranges from 50 ppm to 90%. To investigate the void nucleation and growth behaviour, Cu microstructures were investigated by using scanning transmission electron microscopy (S-TEM) and electron backscatter diffraction (EBSD) technique. EM lifetime shows strong correlation with the void nucleation site and the void volume. In addition, the worst case for EM lifetime is that wide angle grain boundary exists just under the via as a void nucleation site.