Abstract

A comparison of electromigration failure in aluminum films deposited by conventional means and by the ‘‘ionized cluster beam’’ technique on silicon and on SiO2 is presented. The crystal structures of the respective films have been investigated utilizing transmission electron microscopy (TEM), electron diffraction, and x-ray diffraction. An elemental analysis was performed by Auger spectroscopy. The electromigration resistance in some of the films has been found to increase considerably. Possible reasons for this larger lifetime under dc stressing are discussed on the basis of the crystal structures of the films.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call