Abstract
Electromigration failure of copper interconnects in microelectronics evokes a need for materials with improved resistance against electromigration effects. Copper–silver alloy thin films are a promising material for the next generation of interconnects and were investigated with respect to their electromigration resistance. The investigations were done by atom drift experiments by means of Blech structures fabricated in single damascene technology with two different Ta-based liner systems. Electromigration induced atom drift could be demonstrated. The resistance against electromigration of Cu(Ag) films appears to be slightly higher than for pure Cu films. However, significant experimental errors are still present. Additionally, de-alloying effects were observed.
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