Abstract
Electromigration (EM) has been a pivotal reliability challenge for interconnects, but there are only few studies on EM in Cu–Cu joints. In this work, accelerated EM tests for the Cu–Cu joints were conducted at three temperatures (150 °C, 179 °C, and 208 °C) and the temperature-dependent failures were discussed. The polarity effect of the grain growth behaviors at the bonding interfaces was observed at the opposite electron flows, which may be attributed to the difference in EM-build-up stress conditions and the divergence in atomic fluxes. Moreover, the activation energy (Ea) extrapolated from the three EM temperatures was derived as 0.9 eV. As compared to the solder joints with same dimensions, the Cu–Cu joints possess more than ten times of time-to-failures (TTFs) under the same EM condition.
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