Abstract
This paper studies an RF MEMS Switch which consists on a thin bridge which is micromachined and suspended on a layer of dielectric. When a pull-in voltage is applied to the switch, the bridge will deform and settle on to the dielectric layer and thus the capacitance is increased. An imaginary force (contact force) is used here for the micromachined thin bridge to collapse on to the dielectric layer. 1mv of an input voltage is applied to measure the capacitance of the device, which is then increased to 5 V after 25 μs by using a step function having a rise time of 10 μs. The displacement of 2.5E-8 m is achieved and capacitance of 6.8pF is measured by applying 5 V of an input voltage. Nitinol which is shape memory alloy (SMA) is used to model the thin bridge and Silicon Nitride layer acts as a dielectric layer. Since the applied input voltage is greater than the required pull-in voltage, the switch comes in contact with the nitride layer. The complete simulation is carried out in COMSOL Multiphysics.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
