Abstract
On-chip inductors are valuable components in radio-frequency (RF) circuits, which find widespread applications in wireless communication. The performance of current on-chip spiral inductors generally suffers from low quality factor (Q), the detrimental coupling between the device and its ambient via the silicon substrate, and the lack of a good RF ground plane because of the lossy substrate. A solution to these issues is to build a suspended spiral inductor over a cavity whose bottom plane and side-walls are metallized. The deep cavity can dramatically reduce the electromagnetic coupling and the parasitic capacitance between the inductor and the substrate, increasing Q and the self-resonant frequency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
