Abstract
Light-current, spectral, and far-field characteristics of InGaAsN injection lasers on GaAs substrates were studied in a wide temperature range (77–300 K) at various driving current densities. The increase in indium content in InGaAsN solid solution results in a modification of the QW structure, which is manifested in the spontaneous formation of InGaAsN nanoclusters. These changes result in N-shaped temperature dependences of the threshold current density and slope efficiency.
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