Abstract
We studied the electroluminescence (EL) for n+ self-aligned gate GaAs metal-semiconductor field-effect transistors (MESFETs) at room temperature. It has been found that the spatial distribution of the EL intensity is dependent on the luminescence energy. The EL peak with bandgap energy is observed at a region between the source and the gate metals, while the EL with an energy higher than the band gap energy is observed on the drain-side edge of the gate. By studying the correlation between the integrated EL intensity and the drain/gate current, it is concluded that the electron-hole recombination is a dominant luminescence mechanism for both the high and low energy regions for the present n+ self-aligned gate GaAs MESFETs.
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