Abstract
p-n junction diodes have been prepared by implanting Br, Cl and Zn into p-type CuInSe2. The forward current-voltage characteristics can be expressed by I=I0[exp (eV/nkT)−1] with the parameter n≃2. Junctions made by implanting Br and Zn show rectification ratios of 2–3×105 : 1 at 1 V. Electroluminescence was observed in the wavelength region 1.3–1.4 μ with internal quantum efficiency of 20% at 77 °K and 0.1% at room temperature.
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