Abstract
In our previous report, the erbium (Er)-related visible and near-infrared (NIR, ∼1.54 μm) electroluminescence (EL) from the light-emitting device (LED) with Er-doped TiO2 (TiO2:Er) film sputtered on the heavily boron-doped p-type silicon (p+-Si) substrate thus forming the so-called TiO2:Er/p+-Si heterostructure was realized. However, it is still a challenge to enhance the Er-related emissions from the above-structured LED. In this work, we have adopted the strategy of codoping zirconium (Zr) into TiO2 host to significantly enhance the Er-related visible and NIR EL from the TiO2:Er/p+-Si heterostructured LED. It is revealed that the oversize Zr4+ ions substantially substitute for Ti4+ ions in TiO2 lattice. Such substitution results in somewhat distorted crystal field of Er3+ ions incorporated into TiO2 host, which increases the intra-4f transition probabilities of Er3+ ions thus enhancing the characteristic visible and NIR emissions.
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