Abstract
AbstractWe have measured electrical properties and electroluminescence (EL) characteristics of the light-emitting diode (LED) based on a pn junction of n-type microcrystalline silicon carbide (μc-SiC) and porous silicon (PS). The μc-SiC/PS pn junctions showed rectification behavior, and a uniform red EL was observed at a forward voltage larger than 15V. From the relationship between the EL intensity and the forward current, the EL mechanism is interpreted as the recombination of electron-hole pairs doubly injected into the PS layer. No degradation was observed in the EL intensity during the measurements over 8 hours. These results means that μc-SiC serves well as a electron injector to the PS.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
