Abstract
We have fabricated a light-emitting diode based on a pn junction of microcrystalline silicon carbide (μc-SiC) and porous silicon (PS). The μc-SiC/PS junctions showed rectification behaviour, and a uniform red electroluminescence (EL) in the forward direction. The EL mechanism is interpreted as the recombination of electron-hole pairs doubly injected into the PS layer. No degradation was observed in the EL intensity during measurements over 8 hours. These results mean that n-type μc-SiC serves well as an electron injector to PS.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
