Electroluminescence, charge trapping and quenching in Eu implantes SiO 2–Si structures

Abstract

This paper reports an analysis of the electroluminescence (EL) spectra changing, charge trapping and EL quenching during operation of the multicolor Eu implanted metal-oxide-silicon light-emitting devices (MOSLEDs). The nature of the changing of the light-emitting color in the MOSLED is discussed. It is shown that the EL life time of the Eu implanted MOSLED is considerably longer than that of high-efficiency MOSLEDs with Tb and Ge implanted oxide. It is demonstrated that a reduced EL intensity, enhanced negative charge trapping and a good EL stability are associated with enhanced clustering in the Eu implanted oxide during high-temperature furnace annealing. The comparison with the operation of the MOSLED fabricated by using the flash lamp annealing technique is performed.