Electroluminescence from an Au - extra-thin silicon oxynitride film - Si structure

Abstract

The electroluminescence (EL) at room temperature from Au - extra-thin silicon oxynitride (ETSON) - p-Si and Au - ETSON - n-Si structures is reported. The ETSON films were deposited by the rf magnetron sputtering technique, and composite targets were used (the area ratio of Si to was ). The EL spectra were measured under forward bias after the ETSON films had been annealed at 300, 600, 800, and in ambient for 30 min. The Au - ETSON - p-Si structure has a dominant EL band with peak wavelength around 680 nm, and its integrated EL efficiency is an order of magnitude higher than that from a Au - extra-thin Si-rich (ETSSO) film - p-Si structure. Distinguishing it from the Au - ETSSO - Si structure, which emits visible EL only when it is fabricated on p-Si, EL can also be observed in the Au - ETSON - n-Si structure under forward bias, and the two dominant EL bands peak one at around 700 nm and one at around 800 nm. Electron beam irradiation induces a new EL band peaked at 500 nm in the EL spectrum from an Au - ETSON - p-Si structure. From the experimental results it is suggested that electrons and holes from opposite sides tunnel into the ETSON layer and recombine radiatively at luminescence centres there.