Abstract
Nc-Si formed by laser induced chemical vapor deposition (LCVD) showed photoluminescence behavior similar to porous silicon. We have tried to measure electroluminescence signals by applying contacts to the nc-Si made of materials such as Au, ITO, Al. A three-layer structure Me/nc-Si/Me was used and the contacts were found to be unstable during measurements and failed at relative low bias. The total resistance of the structure was very high and therefore the current flow was very low and only few EL measurements could be done at an integral form. The I-V behavior was studied also on nc-Si produced by pulsed laser deposition (PLD).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
