Abstract

We report a new lithography technique based on electromigration driven material transport for drawing patterns at nanometer scales in ambient conditions. We use a thin metal film as a masking layer and a polymer layer beneath it as a pattern transfer layer. The desired pattern is drawn in the metal layer by etching the metal with a conducting scanning probe assisted by liquid electromigration. The pattern drawn on the metal layer is transferred to the polymer layer by etching the polymer with an appropriate solvent. Subsequently, the pattern is transferred to the desired material layer using a film deposition technique followed by conventional lift-off process. Using this simple technique, we have achieved pattern resolutions of 9 nm on the polymer and 40 nm on transferring the pattern to another material. Based on the ease of use and process costs, this technique promises to be competitive to e-beam lithography that employs high energy and ultra-high vacuum, or the industrial standard ultra-violet light photolithography that employs extremely expensive implements to reach nano-scale resolutions. We also demonstrate direct mask writing using this technique and explain the fundamentals behind the workings of the developed method.

Highlights

  • We report a new lithography technique based on electromigration driven material transport for drawing patterns at nanometer scales in ambient conditions

  • No such trenched pattern is created if the atomic force microscope (AFM) tip is traversed with the same contact force but without applying an electric field between the tip and the Cr film, confirming the vital role of electromigration induced material transport in this process

  • Resolution — the minimum width of the patterns — is determined by the geometry of the ‘V’ shaped profile etched into the polymer layer

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Summary

Introduction

We report a new lithography technique based on electromigration driven material transport for drawing patterns at nanometer scales in ambient conditions. The pattern is transferred to the desired material layer using a film deposition technique followed by conventional lift-off process. Based on the ease of use and process costs, this technique promises to be competitive to e-beam lithography that employs high energy and ultrahigh vacuum, or the industrial standard ultra-violet light photolithography that employs extremely expensive implements to reach nano-scale resolutions. An alternate universal lithography technique still does not exist that can be used for both direct writing and preparing masks along with the flexibility of being able to transfer patterns of controllable thickness to desired materials using well established conventional lift-off or etching techniques. Direct writing processes High resolution A gamut of thermal, mechanical, chemical and electrical effect based processes, e.g., anodic oxidation, dynamic ploughing, bias assisted patterning, etc., proffering customization

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