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Abstract
For the improvement of the silicon solar cell and competitiveness, one of the today challenges is to process Ni/Cu contact lines by chemical way. The study presented in this article is focused on the annealing of electroless nickel-phosphorous layers to create the NiSi film necessary for the good adhesion of the Ni/Cu stack and to guaranty the low contact resistance of these lines. The impact of the initial Ni-P layer thickness and the annealing temperature were particularly taken into account. Thanks to a combination of characterization techniques (SEM, EDS and XPS), the thickness and the composition of the NiSi layer were well established and monitored enabling to optimize the contact line procedure.
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