Abstract
This paper describes Cu and Ag electroless deposition applicable to ULSI interconnection. First, the electroless deposition of Cu and Ag seed layers for Cu and Ag electrodeposition was carried out on Ta and TiN barrier layers, respectively through the optimized pretreatment processes. Then, a direct Cu electroless filling for main conductor formation was performed on the single damascene structure based on the concentration-dependent effect of additives on blanket wafers.
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