Abstract
CoMoB film was prepared on Si substrate via electroless deposition as the diffusion barrier for ULSI-Cu metallization. Annealing experiments of CoMoB(30nm) film and CoMoB(10nm)/Cu (40nm)/CoMoB(30nm)/SiO2/Si multi-films were carried out in the temperature range from 400◦C to 700◦C. Failure temperature and mechanism of Cu diffusion in CoMoB film were discussed. The composition, sheet resistance and morphology of the film were investigated by X-Ray Diffractometer (XRD), Four Point Probe (FPP) and Atomic Force Microscopy (AFM), respectively. It can be concluded that the failure temperature of CoMoB film is 600◦C. The main reason of failure is that a large number of Cu particles passed through CoMoB grain boundary and reacted with Si substrate to generate Cu4Si with high resistance.
Published Version
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